amplifiers and high energy pulse circuits. Part Number. IRF IRF N.I Semi-Conductors encourages customers to verify that datasheets are current. IRF datasheet, IRF pdf, IRF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, A, V, Ohm, N-Channel Power MOSFET. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power.
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Gate-to-Source Voltage Document Number: Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. C, Dec Document Number: C, Dec 0 10 5 Ciss Fig. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Such statements are not binding statements about the suitability of products for a particular application.
Please note that some Vishay documentation may still make reference to the IEC definition.
IRF Datasheet(PDF) – Inchange Semiconductor Company Limited
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Repetitive rating; pulse width limited by maximum junction temperature see fig. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
Products may be manufactured at one of several qualified locations. No license, express or implied, by estoppel or otherwise, to any intellectual property rights dayasheet granted by this document or by any conduct of Vishay.
The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately dqtasheet W. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. For example, parts with lead Pb terminations are not RoHS-compliant.